In this article, we present a channel thickness dependent analytical model for MoS₂ symmetric double-gate FETs including negative capacitance (NC) effect. In the model development, first thickness dependent model of the baseline 2D FET is developed, and later NC effect is included in the model using the Landau-Khalatnikov (L-K) relation. To validate baseline model behavior, density functional theory (DFT) calculations are taken into account to obtain numerical data for the $K$ and $\Lambda $ valley dependent effective masses and differences in the energy levels of N-layer (N = 1, 2, 3, 4, and 5) MoS₂. The calculated layer dependent parameters using DFT theory are further used in a drift-diffusion simulator to obtain electric characteristics of the baseline 2D FET for model validation. The model shows excellent match for drain current and total gate capacitance of baseline FET and NCFET against the numerical simulation.

中文翻译：

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包含负电容效应的多层 MoS2 FET 的紧凑建模

在本文中，我们为包括负电容 (NC) 效应的MoS ₂对称双栅极 FET提供了一个与沟道厚度相关的分析模型。在模型开发中，首先开发了基线 2D FET 的厚度相关模型，然后使用 Landau-Khalatnikov (LK) 关系将 NC 效应包含在模型中。为了验证基线模型的行为，密度泛函理论 (DFT) 计算被考虑在内以获得数值数据 $K$ 和 $\Lambda $ 谷相关的有效质量和 N 层（N = 1、2、3、4 和 5）MoS ₂能级的差异。使用 DFT 理论计算的层相关参数进一步用于漂移扩散模拟器，以获得用于模型验证的基线 2D FET 的电特性。该模型显示基线 FET 和 NCFET 的漏极电流和总栅极电容与数值模拟非常匹配。