This article presents a systematic study on the analog and radio-frequency (RF) performance of type-II staggered heterostructure ${p}$ -channel tunnel field-effect transistors ( ${p}$ TFETs) with Ge (Germanium) channel and different compound semiconductor source. In order to study the figure-of-merits (FOMs) of analog and RF performances, various Ge-channel ${p}$ TFETs are designed with Ge, GaAsP, SiGe, and InAlAs sources. The numerical simulation data show an improvement in the FOMs of analog performance such as drain current ( $I_{ds}$ ), transconductance ( $g_{m}$ ), transconductance-generation-factor ( $g_{m}$ /I $_{ds}$ ), and intrinsic gain ( $g_{m}$ $R_{o}$ ) of the devices with compound semiconductor source compared to Ge-source ${p}$ TFET devices. Similarly, an improvement in the RF FOMs such as gate-to-source ( $\text{C}_{gs}$ ) and gate-to-drain ( $\text{C}_{gd}$ ) capacitances, maximum frequency of oscillation ( $f_{MAX}$ ), and cutoff frequency ( $f_{T}$ ) is observed for the devices with GaAsP, SiGe, and InAlAs source compared to Ge-source ${p}$ TFETs. The simulation results also show that the common-source amplifiers, designed with Ge-heterostructure ${p}$ TFETs, exhibit a significant enhancement in gain and Gain-Bandwidth product of the circuit.

中文翻译：

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用于模拟/射频应用的异质结构 Ge-Body pTFET

本文介绍了对 II 型交错异质结构的模拟和射频 (RF) 性能的系统研究 ${p}$ -沟道隧道场效应晶体管（ ${p}$ TFET）具有 Ge（锗）沟道和不同的化合物半导体源。为了研究模拟和射频性能的品质因数 (FOM)，各种 Ge 通道 ${p}$ TFET 设计有 Ge、GaAsP、SiGe 和 InAlAs 源。数值模拟数据显示模拟性能如漏极电流 ( $I_{ds}$ ), 跨导 ( $g_{m}$ ), 跨导产生因子 ( $g_{m}$ /一世 $_{ds}$ ) 和内在增益 ( $g_{m}$ $R_{o}$ ) 具有化合物半导体源的器件与 Ge 源的比较 ${p}$ TFET 器件。类似地，RF FOM 的改进，例如栅极到源极 ( $\text{C}_{gs}$ ) 和栅极到漏极 ( $\text{C}_{gd}$ ) 电容，最大振荡频率 ( $f_{MAX}$ ) 和截止频率 ( $f_{T}$ ) 与 Ge 源相比，对于具有 GaAsP、SiGe 和 InAlAs 源的器件观察到 ${p}$ TFET。仿真结果还表明，采用 Ge 异质结构设计的共源放大器 ${p}$ TFET 表现出电路增益和增益带宽乘积的显着增强。