This paper presents our technological approach for Externally Modulated Lasers (EMLs), based on Semi-Insulating Buried Heterostructure (SIBH) waveguide. We use Gas Source Molecular Beam Epitaxy (GSMBE) to grow the Phosphorus-based multi-quantum wells for both laser and modulator sections with butt-joint integration. The same GSMBE grows the p-doped InP claddings with low-diffusion Be dopant, leading to an accurate control of doping profiles, ensuring very steep modulator extinction curves. We present the main EML design rules and compromises, then apply them to different EMLs aiming at major telecom and datacom applications. After presenting characteristics of the standard 10 Gb/s C-band EML, we propose a 10 Gb/s EML at 1577 nm for next generation access networks, with a record high 10.5 dBm facet modulated power. Then we present high-speed EMLs up to 56 GBaud for datacenter interconnections, both in O- and C-band, aiming at very low peak-to-peak modulation voltage (< 1.2 V), high facet modulated power (> 4.4 dBm), and compatible with uncooled operation (20 to 70 °C). These results confirm the efficiency and versatility of this technological platform for EMLs in a broad range of applications.

中文翻译：

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适用于多种电信应用的多功能外部调制激光器技术

本文介绍了我们基于半绝缘埋入异质结构 (SIBH) 波导的外调制激光器 (EML) 技术方法。我们使用气体源分子束外延 (GSMBE) 来生长基于磷的多量子阱，用于具有对接集成的激光和调制器部分。相同的 GSMBE 生长具有低扩散 Be 掺杂剂的 p 掺杂 InP 包层，从而实现对掺杂分布的准确控制，确保非常陡峭的调制器消光曲线。我们介绍了主要的 EML 设计规则和折衷方案，然后将它们应用于针对主要电信和数据通信应用的不同 EML。在介绍了标准 10 Gb/s C 波段 EML 的特性之后，我们为下一代接入网络提出了 1577 nm 的 10 Gb/s EML，具有创纪录的 10.5 dBm 分面调制功率。然后，我们针对 O 波段和 C 波段中的数据中心互连提供高达 56 GBaud 的高速 EML，旨在实现极低的峰峰值调制电压 (< 1.2 V)、高面调制功率 (> 4.4 dBm) ，并兼容非制冷操作（20 至 70 °C）。这些结果证实了 EML 技术平台在广泛应用中的效率和多功能性。