Silicon photonics has become an industrial reality for datacom applications. Nevertheless, as Si suffers from a low electro-optic effect, commercial modulators are few-mm long. The efficiency can be enhanced by using strained-SiGe or by using a semiconductor insulator semiconductor (SIS) architecture. In this paper, we develop a model based on a perturbative approach to optimize capacitive modulator using full-Si or including a thin layer of strained SiGe. This model is coupled with an optimization algorithm in order to estimate the highest optimal modulation amplitude for different operating frequencies.

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使用硅和应变硅锗进行数据通信应用的电容调制器设计优化

硅光子学已成为数据通信应用的工业现实。然而，由于 Si 具有低电光效应，因此商用调制器只有几毫米长。可以通过使用应变 SiGe 或使用半导体绝缘体半导体 (SIS) 架构来提高效率。在本文中，我们开发了一个基于微扰方法的模型，以使用全硅或包括应变 SiGe 薄层来优化电容调制器。该模型与优化算法相结合，以估计不同工作频率的最高最佳调制幅度。