ABSTRACT This paper deals with dilute nitride III-V (III-N-V) semiconductor nanowires and their synthesis by bottom-up (so-called self-assembly) methods for application to novel and high efficiency intermediate-band solar cells (IBSCs). Nanowire-IBSCs based on III-N-V compounds promise to overcome many of the limitations encountered so far in quantum-dots or planar-heterostructure IBSCs; indeed, thanks to the combination of IBSC functionality with the unique physical properties associated with nanowires-based devices, photovoltaic cells with unprecedentedly high power conversion efficiency, simpler junction geometry, reduced structural constraints, low materials usage and fabrication costs could be conceived. The fabrication of III-N-V nanowire-IBSCs requires however, careful engineering of the inner nanowire-device structures to comply with both IBSC stringent operational requirements and the peculiar physical properties of III-N-V semiconductor alloys. Herewith, we propose for the first time perspective III-N-V core-multishell nanowire heterostructures as potential candidates to IBSC applications, their fabrication requiring however, precisely controlled self-assembly technologies. The present status of research on the topic is reviewed, focusing in particular on the bottom-up growth of III-N-V nanowires by molecular beam and metalorganic vapor phase epitaxy methods and properties of as-grown nanostructures. Major results achieved in the current literature and open problems are presented and discussed, along with advantages and limitations of employed self-assembly methods for the fabrication of dilute nitride III-V based nanowire-IBSCs.

中文翻译：

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用于高效中带光伏电池的稀氮化物 III-V 纳米线：材料要求、自组装方法和性能

摘要本文讨论了稀氮化物 III-V (III-NV) 半导体纳米线及其通过自下而上（所谓的自组装）方法的合成，以应用于新型高效中带太阳能电池 (IBSC)。基于 III-NV 化合物的纳米线 IBSC 有望克服迄今为止在量子点或平面异质结构 IBSC 中遇到的许多限制；事实上，由于将 IBSC 功能与基于纳米线的器件相关的独特物理特性相结合，可以设想具有前所未有的高功率转换效率、更简单的结几何、减少结构限制、低材料使用和制造成本的光伏电池。然而，III-NV 纳米线-IBSC 的制造需要，内部纳米线器件结构的精心设计，以符合 IBSC 严格的操作要求和 III-NV 半导体合金的特殊物理性能。因此，我们首次提出将 III-NV 核-多壳纳米线异质结构作为 IBSC 应用的潜在候选者，但它们的制造需要精确控制的自组装技术。回顾了该主题的研究现状，特别关注通过分子束和金属有机气相外延方法自下而上生长 III-NV 纳米线以及生长纳米结构的性质。介绍和讨论了当前文献中取得的主要成果和未解决的问题，