Abstract Time-dependent profiles of phototransferred thermoluminescence (PTTL) of Al2O3:C, Mg are presented and analysed. Whereas qualitative discussions consider theoretical predictions, mathematical analysis of the profiles is based on experimental results. The thermoluminescence glow curve of unannealed Al2O3:C, Mg measured at 1oC/s following irradiation to 2 Gy consists of at least eight peaks. There is a prominent peak at 165oC and 7 secondary peaks at 43, 73, 195, ∼246, 284, ∼336 and 374oC respectively. These are labelled I through VIII in order of appearance. Of these, only peaks I-IV are reproduced under phototransfer. The role of various electron traps as donors was determined using pulse annealing as well as by monitoring the dependence of peak intensity on duration of illumination used in the phototransfer. In particular, this shows that the electron trap for peak III at 165oC, the main one, is the dominant donor to the electron traps responsible for PTTL at peaks I and II. There is also evidence of deep electron traps and deep hole traps beyond 500oC which contribute to phototransferred thermoluminescence associated with peak III. The dependence of PTTL intensity on illumination time has been analysed using sets of coupled first order linear differential equations which describe the charge transfer at the electron traps involved. Particular solutions to the family of equations set up have been applied on experimental data successfully as evident in residuals associated with each fit.

中文翻译：

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Al2O3:C,Mg 光转移热释光的光照时间相关分布分析

摘要 介绍并分析了 Al2O3:C、Mg 的光转移热释光 (PTTL) 随时间变化的分布。定性讨论考虑了理论预测，而轮廓的数学分析则基于实验结果。未退火的 Al2O3:C, Mg 的热释光辉光曲线以 1oC/s 的速度在辐照 2 Gy 后测量，该曲线至少包含八个峰。在 165oC 有一个显着的峰，在 43、73、195、∼246、284、∼336 和 374oC 分别有 7 个次要峰。这些按出现顺序标记为 I 到 VIII。其中，只有峰 I-IV 在光转移下重现。使用脉冲退火以及通过监测峰值强度对光转移中使用的照明持续时间的依赖性来确定各种电子陷阱作为供体的作用。特别是，这表明 165oC 峰 III 的电子陷阱是主要的电子陷阱，它是负责峰 I 和 II 的 PTTL 的电子陷阱的主要供体。还有证据表明，超过 500oC 的深电子陷阱和深空穴陷阱有助于与峰 III 相关的光转移热释光。PTTL 强度对照明时间的依赖性已使用描述所涉及的电子陷阱处的电荷转移的耦合一阶线性微分方程组进行了分析。方程组的特定解已成功应用于实验数据，如与每次拟合相关的残差所证明的那样。还有证据表明，超过 500oC 的深电子陷阱和深空穴陷阱有助于与峰 III 相关的光转移热释光。PTTL 强度对照明时间的依赖性已使用描述所涉及的电子陷阱处的电荷转移的耦合一阶线性微分方程组进行了分析。方程组的特定解已成功应用于实验数据，如与每次拟合相关的残差所证明的那样。还有证据表明，超过 500oC 的深电子陷阱和深空穴陷阱有助于与峰 III 相关的光转移热释光。PTTL 强度对照明时间的依赖性已使用描述所涉及的电子陷阱处的电荷转移的耦合一阶线性微分方程组进行了分析。方程组的特定解已成功应用于实验数据，如与每次拟合相关的残差所证明的那样。