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Interfaces between MoO x and MoX 2 (X = S, Se, and Te)Project supported by the National Natural Science Foundation of China (Grant No. 11874427), the National Science Foundation DMR-1903962, and the Fundamental Research Funds for the Central Universities of Central South University (Grant No. 2019zzts429).
Chinese Physics B ( IF 1.7 ) Pub Date : 2020-11-06 , DOI: 10.1088/1674-1056/abb310
Fengming Chen 1 , Jinxin Liu 1 , Xiaoming Zheng 1 , Longhui Liu 1 , Haipeng Xie 1 , Fei Song 2 , Yongli Gao 1, 3 , Han Huang 1
Affiliation  

In the past decades there have been many breakthroughs in low-dimensional materials, especially in two-dimensional (2D) atomically thin crystals like graphene. As structural analogues of graphene but with a sizeable band gap, monolayers of atomically thin transition metal dichalcogenides (with formula of MX 2, M = Mo, W; X = S, Se, Te, etc.) have emerged as the ideal 2D prototypes for exploring fundamentals in physics such as valleytronics due to the quantum confinement effects, and for engineering a wide range of nanoelectronic, optoelectronic, and photocatalytic applications. Transition metal trioxides as promising materials with low evaporation temperature, high work function, and inertness to air have been widely used in the fabrication and modification of MX 2. In this review, we reported the fabrications of one-dimensional MoS2 wrapped MoO2 single crystals with varied crystal direction via atmospheric pressure chemical vapor deposition method and of 2D MoO x covered MoX 2 by means of exposing MoX 2 to ultraviolet ozone. The prototype devices show good performances. The approaches are common to other transition metal dichalcogenides and transition metal oxides.



中文翻译:

MoO x和Mo X 2之间的界面(X = S,Se和Te) 国家自然科学基金(批准号11874427),国家科学基金会DMR-1903962和中南大学中央大学基础研究基金(批准号2019zzts429)资助的项目。

在过去的几十年中,低维材料,尤其是像石墨烯这样的二维(2D)原子薄晶体取得了许多突破。作为石墨烯的结构类似物,但具有较大的带隙,是原子薄的过渡金属二卤化物单分子层(分子式为MX 2M = Mo,W; X= S,Se,Te等)已成为理想的2D原型,它由于量子约束效应而用于探索诸如山谷电子学之类的物理学基础,并用于工程化各种纳米电子,光电和光催化应用。过渡金属三氧化物作为具有前途的材料,具有低的蒸发温度,高的功函和对空气的惰性,已被广泛用于MX 2的制备和改性。在这篇综述中,我们报道了通过大气压化学气相沉积法制备具有变化晶体方向的一维MoS 2包裹的MoO 2单晶,以及通过暴露Mo制备二维MoO x覆盖的Mo X 2的方法。 X 2为紫外线臭氧。原型设备表现出良好的性能。该方法是其他过渡金属二卤化物和过渡金属氧化物所共有的。

更新日期:2020-11-06
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