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Graphene field effect transistor scaling for ultra-low-noise sensors
Nanotechnology ( IF 3.5 ) Pub Date : 2020-11-06 , DOI: 10.1088/1361-6528/abc0c8
Ngoc Anh Minh Tran 1 , Ibrahim Fakih 1 , Oliver Durnan 1 , Anjun Hu 1 , Ayse Melis Aygar 1 , Ilargi Napal 2 , Alba Centeno 2 , Amaia Zurutuza 2 , Bertrand Reulet 3 , Thomas Szkopek 1
Affiliation  

The discovery of the field effect in graphene initiated the development of graphene field effect transistor sensors, wherein high mobility surface conduction is readily modulated by surface adsorption. For all graphene transistor sensors, low-frequency 1/f noise determines sensor resolution, and the absolute measure of 1/f noise is thus a crucial performance metric for sensor applications. Here we report a simple method for reducing 1/f noise by scaling the active area of graphene field effect transistor sensors. We measured1/f noise in graphene field effect transistors with size 5 μm × 5 μm to 5.12 mm × 5.12 mm, observing more than five orders of magnitude reduction in 1/f noise. We report the lowest normalized graphene1/f noise parameter observed to date, 5 × 10-13, and we demonstrate a sulfate ion sensor with a record resolution of 1.2 × 10-3log molar concentration units. Our work highlights the importance of area scaling in graphene field effect transistor sensor design, wherein increased channel area improves sensor resolution.

中文翻译:

用于超低噪声传感器的石墨烯场效应晶体管缩放

石墨烯中场效应的发现启动了石墨烯场效应晶体管传感器的开发,其中高迁移率的表面传导很容易通过表面吸附进行调节。对于所有石墨烯晶体管传感器,低频 1/f 噪声决定了传感器分辨率,因此 1/f 噪声的绝对测量值是传感器应用的关键性能指标。在这里,我们报告了一种通过缩放石墨烯场效应晶体管传感器的有源面积来降低 1/f 噪声的简单方法。我们测量了尺寸为 5 μm × 5 μm 至 5.12 mm × 5.12 mm 的石墨烯场效应晶体管中的 1/f 噪声,观察到 1/f 噪声降低了五个数量级以上。我们报告了迄今为止观察到的最低归一化石墨烯 1/f 噪声参数 5 × 10-13,并且我们展示了具有 1 记录分辨率的硫酸根离子传感器。2 × 10-3log 摩尔浓度单位。我们的工作强调了面积缩放在石墨烯场效应晶体管传感器设计中的重要性,其中增加通道面积可以提高传感器分辨率。
更新日期:2020-11-06
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