Hematite iron oxide (Fe₂O₃), which is an n-type semiconductor with a bandgap of 2.0∼2.2eV, is harmless to humans and extremely abundant on the Earth. In this work, Cu-doped p-type iron oxide thin films were fabricated by two-step pulse electrochemical deposition (ECD) from aqueous solutions containing FeSO₄ and CuSO₄. Composition uniformity was improved, and surface roughness was reduced compared with films deposited by constant-potential ECD. From the results of photoelectrochemical measurement, it was confirmed that the conduction type of Cu-doped films was p-type. The fabrication of a low-cost solar cell based on iron oxide was also attempted, for the first time. A Cu-doped p-type layer was deposited onto an indium-tin-oxide-coated glass substrate, and a non-doped n-type layer was deposited onto it. Then the sample was annealed in air. The fabricated solar cells showed weak rectification and photovoltaic effects.

作为带隙为2.0〜2.2eV的n型半导体的赤铁矿氧化铁（Fe ₂ O ₃）对人体无害，在地球上极为丰富。在这项工作中，通过包含FeSO ₄和CuSO _4的水溶液的两步脉冲电化学沉积（ECD）制备了掺杂Cu的p型氧化铁薄膜。。与通过恒电位ECD沉积的薄膜相比，提高了成分均匀性，并降低了表面粗糙度。从光电化学测量的结果，确认了掺杂Cu的膜的导电类型为p型。首次尝试了基于氧化铁的低成本太阳能电池的制造。将Cu掺杂的p型层沉积到涂覆有氧化铟锡的玻璃基板上，并且将非掺杂的n型层沉积在其上。然后将样品在空气中退火。所制造的太阳能电池显示出弱的整流和光伏效应。