In this paper, we have designed and realized a two-stage low-noise power amplifier (LNPA) with resistive feedback network targeting for Ka-band compact RF front-end applications. Featuring the characteristics of both low noise and high power at the same time, the LNPA is expected to be a possible one-chip replacement of power and low noise amplifiers integrated in a conventional transceiver/receiver (T/R) module. Such configuration features size compactness while reduces implementation complexity which is of crucial importance for integration in antenna arrays with large number of antenna elements. Implemented in 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology, the LNPA, operating at 36–40 GHz, exhibits a peak gain of 15.96 dB, a minimum noise figure of 2.88 dB, a power consumption of 152 mW and a measured 1-dB compression output power of 14.92 dBm at 38 GHz, respectively. The LNPA also featured a very good linearity performance with a measured output third-order interception point (IP3) of 22.22 dBm at 38 GHz.

中文翻译：

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紧凑的低噪声功率放大器设计和毫米波频率实现

在本文中，我们已经设计并实现了针对电阻器反馈网络的两级低噪声功率放大器（LNPA），其目标是用于Ka频段紧凑型RF前端应用。LNPA同时具有低噪声和高功率的特性，有望成为集成在常规收发器/接收器（T / R）模块中的功率和低噪声放大器的单芯片替代产品。这样的配置具有尺寸紧凑性，同时降低了实现复杂性，这对于具有大量天线元件的天线阵列中的集成至关重要。LNPA采用0.15μm的GaAs伪高电子迁移率晶体管（pHEMT）技术实现，工作于36-40 GHz，其峰值增益为15.96 dB，最小噪声系数为2.88 dB，38 GHz时的功耗为152 mW，测得的1-dB压缩输出功率为14.92 dBm。LNPA还具有非常好的线性性能，在38 GHz时测得的输出三阶拦截点（IP3）为22.22 dBm。