In this study, channel potential for silicon-based doped dual-metal double-gate tunnel field-effect transistor structure is analytically solved using the evanescent-mode approach in the sub-threshold region. This method generally describes short channel effects in the entire channel region of the device structure and predicts different characteristic length which depends on tunnel current and does not depend along a transverse direction within the channel. The model is valid for the whole device structure rather than just semiconductor/insulator interfaces. The impact of variation of bias condition on channel potential is also investigated in the sub-threshold region. Finally, drain current is evaluated using Kane's and Kleysh's model and validated with a calibrated simulation, which has been carried out using 2D TCAD Sentaurus simulator.

中文翻译：

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基于消逝模式的双金属双栅隧道场效应晶体管的紧凑建模

在这项研究中，使用亚阈值区域中的e逝模式方法解析地解决了基于硅的掺杂双金属双栅隧道场效应晶体管结构的沟道电势。此方法通常描述器件结构整个通道区域中的短通道效应，并预测不同的特征长度它取决于隧道电流，并且不取决于通道内的横向方向。该模型对整个设备结构有效，而不仅对半导体/绝缘体接口有效。在亚阈值区域内，还研究了偏置条件变化对沟道电势的影响。最后，使用Kane和Kleysh模型评估漏极电流，并使用2D TCAD Sentaurus仿真器进行的校准仿真进行验证。