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Analysis and mathematical modelling of charge injection effect for efficient performance of CMOS imagers and CDS circuit
IET Circuits, Devices & Systems ( IF 1.3 ) Pub Date : 2020-11-03 , DOI: 10.1049/iet-cds.2020.0096
Ashish Tiwari 1 , R.H. Talwekar 2
Affiliation  

Mathematical modelling of non-linearity due to charge injection phenomenon with variation in desired characteristics of complementary metal oxide semiconductor (CMOS) image sensor (CIS) and correlated double sampling (CDS) circuits is presented. Existing suppression strategies of charge injection effect for CIS and CDS circuits lack in accuracy because of the absence of knowledge of its effect with variation in major device parameters related to switching transistors viz. width ( W ), length ( L ), sense node capacitance ( Cpd ) and photon current ( I ph ). Therefore, variations in these parameters under the effect of charge injection have been experimentally studied. Based on the outcomes, it can be concluded that four-parameter logistic regression symmetrical sigmoid function is the best fit for the non-linearity introduced. Also, the devised mathematical model could be utilised as an activation function to train the biological neurons in CIS centred biomedical applications. A brief illustration of the same has been included for electrical stimulation of retinal cells. Further, the higher values of I ph , Cpd and scaling of switching transistors as W min and L > L min can prove effective in reducing the non-linearity. Contrary to previous studies, the higher value of Cpd utilising the normal photodiode found suitable for charge injection suppression in CIS.

中文翻译:

电荷注入效应的分析和数学建模,可提高CMOS成像器和CDS电路的性能

提出了由于电荷注入现象而导致的非线性数学模型,该现象具有互补金属氧化物半导体(CMOS)图像传感器(CIS)和相关双采样(CDS)电路所需特性的变化。现有的针对CIS和CDS电路的电荷注入效应的抑制策略缺乏准确性,这是因为缺乏与开关晶体管viz有关的主要器件参数的变化对其影响的知识。宽度( w ^ ), 长度 ( 大号 ),感测节点电容( ç PD )和光子电流( 一世 ph )。因此,已经通过实验研究了在电荷注入作用下这些参数的变化。根据结果​​,可以得出结论,四参数对数回归对称乙状结肠功能最适合引入的非线性。而且,所设计的数学模型可以用作激活功能,以训练以CIS为中心的生物医学应用中的生物神经元。包括对视网膜细胞的电刺激的简要说明。此外,较高的值一世 pH值ç PD 并按比例缩放开关晶体管 w ^ 分钟大号 > 大号 min可以证明有效地减少了非线性。与以前的研究相反,ç PD 利用被发现适合抑制CIS中电荷注入的普通光电二极管。
更新日期:2020-11-06
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