Dual-channel thin-film transistors (TFTs) show excellent effective mobility ( μ eff ) and reliability, including negative-bias-illumination stability. To enhance the performance of these devices, post-thermal annealing in air is performed for 2 h at the low temperature of 250°C. To investigate the effects of low-temperature thermal annealing, indium–zinc-oxide/gallium–indium–zinc-oxide (IZO/IGZO) dual-channel TFTs with various IZO thicknesses are fabricated and examined. The observed parameters are μ eff , saturation mobility ( μ sat ), subthreshold slope (SS), and threshold voltage ( V TH ). The interface quality may be improved by low-temperature thermal annealing, which was confirmed by the improvement in μ eff and SS . However, these performance enhancements are intensively observed only in the channels with an IZO thickness below 10 nm. When the IZO thickness becomes 10 nm or more, the improvement in μ eff due to low-temperature thermal annealing hardly occurs. This is because μ eff is greatly influenced by the interface quality due to Coulomb scattering when the IZO thickness is <10 nm. However, for an IZO thickness above 10 nm, as phonon scattering also has a significant effect on μ eff , the improvement in interface quality by thermal annealing is small. This is also supported by low-frequency noise measurements, which are sensitive to interface quality.

中文翻译：

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低温热退火对IZO/IGZO双通道薄膜晶体管界面特性的影响

双通道薄膜晶体管 (TFT) 显示出出色的有效迁移率 (μ eff ) 和可靠性，包括负偏置照明稳定性。为了提高这些器件的性能，在 250°C 的低温下在空气中进行了 2 小时的后热退火。为了研究低温热退火的影响，制造并检查了具有各种 IZO 厚度的氧化铟锌/镓铟锌氧化物 (IZO/IGZO) 双通道 TFT。观察到的参数是 μ eff 、饱和迁移率 ( μ sat )、亚阈值斜率 (SS) 和阈值电压 ( V TH )。界面质量可以通过低温热退火得到改善，μ eff 和SS 的改善证实了这一点。然而，这些性能增强仅在 IZO 厚度低于 10 nm 的通道中被强烈观察到。当IZO厚度变为10nm或更大时，由于低温热退火引起的μ eff 的改善几乎不发生。这是因为当 IZO 厚度 <10 nm 时，μ eff 受界面质量的影响很大，这是由于库仑散射造成的。然而，对于 10 nm 以上的 IZO 厚度，由于声子散射对 μ eff 也有显着影响，因此热退火对界面质量的改善很小。这也得到了对接口质量敏感的低频噪声测量的支持。由于声子散射对 μ eff 也有显着影响，因此热退火对界面质量的改善很小。这也得到了对接口质量敏感的低频噪声测量的支持。由于声子散射对 μ eff 也有显着影响，因此热退火对界面质量的改善很小。这也得到了对接口质量敏感的低频噪声测量的支持。