Reductions in transistor size have improved functionality of transistors and lowered costs of electronic processors. However, as transistors decrease in size, quantum tunneling causes increased leakage currents and power consumption. To resolve power consumption issues, tunnel field-effect transistors (TFETs) utilizing band-to-band tunneling (BTBT) have been suggested. Such devices can overcome the 60 mV/dec subthreshold swing (SS) limit that is a disadvantage of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs), but only a limited number of TFETs have achieved this at 300 K. Here, we report complementary trilayer–bulk black phosphorus (BP) heterojunction TFETs with an SS_min of 17.7 mV/dec (21.3 mV/dec) for p-type (n-type) operation. In the same devices, SS ≫ 60 mV/dec is exhibited when BTBT occurs within the trilayer BP, indicating that BTBT between the heterojunction of a trilayer–bulk BP is the key to achieving a subthermionic SS. Our work demonstrates the utility of BP heterojunctions in developing energy-efficient switches.

中文翻译：

---

具有亚热电亚阈值摆幅的互补三层-大块黑色磷异质结隧道场效应晶体管

晶体管尺寸的减小提高了晶体管的功能并降低了电子处理器的成本。但是，随着晶体管尺寸的减小，量子隧穿导致泄漏电流和功耗的增加。为了解决功耗问题，已经提出了利用带间隧穿（BTBT）的隧道场效应晶体管（TFET）。这样的器件可以克服60 mV / dec的亚阈值摆幅（SS）限制，这是常规金属氧化物半导体场效应晶体管（MOSFET）的缺点，但是在300 K时只有有限的TFET达到了这一点。我们报道了具有SS _min的互补三层-散装黑磷（BP）异质结TFETp型（n型）操作的最大输出电压为17.7 mV / dec（21.3 mV / dec）。在相同的器件中，当三层BP内出现BTBT时，SS≫ 60 mV / dec，这表明三层-本体BP异质结之间的BTBT是实现亚热电子SS的关键。我们的工作证明了BP异质结在开发节能开关中的实用性。