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Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe1−xTex Thin Films
Physica Status Solidi-Rapid Research Letters ( IF 2.8 ) Pub Date : 2020-11-04 , DOI: 10.1002/pssr.202000451
Martina Tomelleri 1, 2 , Françoise Hippert 3 , Thierry Farjot 1 , Christophe Licitra 1 , Nicolas Vaxelaire 1 , Jean-Baptiste Dory 1 , Daniel Benoit 2 , Valentina Giordano 4 , Pierre Noé 1
Affiliation  

The electrical, optical, and structural properties of GeSe1−xTex phase‐change materials thin films with 0.16 ≤ x ≤1 prepared by cosputtering of GeSe and GeTe targets are studied. The crystallization temperature of the films increases significantly when the Te content decreases. Se‐rich films show an extremely large electrical contrast between their amorphous and crystalline states. A high polarizability of the crystalline phase is observed in the entire x range and is related to the presence of metavalent bonds. This is explained by the persistence of a rhombohedral crystalline phase, isostructural to GeTe, in the GeSe1−xTex films down to x = 0.16. Hence, the substitution of only 16 at% of the Se atoms by Te atoms transforms the covalent GeSe into a phase‐change material with a huge and unprecedented contrast of resistivity (up to 11 orders of magnitude) and a very high thermal stability (up to 10 years at 272 °C) for an alloy exhibiting no phase separation upon crystallization. This outstanding combination of properties makes Se‐rich GeSe1−xTex thin films extremely promising for integration in memory devices requiring a very high data retention such as automotive and embedded applications.

中文翻译:

克服GeSe1-xTex薄膜中高温应用的硫族化物相变材料的热稳定性极限

GESE的电,光,和结构特性1- XX的相变材料薄膜与0.16≤  X  ≤1通过GESE和的GeTe靶共溅射制备进行了研究。当Te含量降低时,薄膜的结晶温度显着升高。富硒薄膜在其非晶态和结晶态之间显示出极大的电对比度。在整个x范围内观察到结晶相的高极化率,并且与亚共价键的存在有关。这可以通过GeSe 1- x Te x薄膜中低至x的,与GeTe同构的菱面体晶相的持久性来解释。 = 0.16。因此,仅16个原子百分比的Se原子被Te原子取代,将共价GeSe转变为相变材料,其电阻率具有前所未有的巨大反差(高达11个数量级),并且具有非常高的热稳定性(高达合金在272°C下放置10年),结晶后不会出现相分离。这种出色的性能组合使富硒GeSe 1 - x Te x薄膜极有希望将其集成到要求非常高数据保留率的存储设备中,例如汽车和嵌入式应用。
更新日期:2020-11-04
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