Abstract Diamond wire sawing technology is widely used in polysilicon cutting. The poor lubrication performance of the common water-based cutting fluid results in many cutting grooves and kerfs on wafer surface, which increases the difficulty of subsequent processing. In this paper, the application of nanoparticles water-based cutting fluid in polysilicon diamond wire sawing was proposed to further improve surface quality of wafers. A novel water-based cutting fluid was prepared with nano silicon carbide (N–SiC), polyethylene glycol (PEG2000) and sodium carboxymethylcellulose (CMC-Na). The dispersibility and friction performance of N–SiC cutting fluid were studied. And then the cutting performance of cutting fluid with different N–SiC content was investigated. Research results show that the dispersibility and friction performance of cutting fluid with 0.2 wt% N–SiC, 0.5 wt% CMC-Na and 6 wt% PEG2000 are the best. N–SiC particles can effectively reduce the width of edge breakage and the surface roughness of polysilicon wafers. The width of edge breakage and the surface roughness reach the lowest value when the N–SiC content in the cutting fluid is 0.2 wt%.

中文翻译：

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纳米碳化硅水基切削液在多晶硅切削中的研究

摘要 金刚石线锯技术广泛应用于多晶硅切割。普通水性切削液的润滑性能较差，导致晶圆表面出现许多切割槽和切缝，增加了后续加工的难度。本文提出了纳米颗粒水性切削液在多晶硅金刚石线锯中的应用，以进一步提高晶片的表面质量。用纳米碳化硅（N-SiC）、聚乙二醇（PEG2000）和羧甲基纤维素钠（CMC-Na）制备了一种新型水基切削液。研究了N-SiC切削液的分散性和摩擦性能。然后研究了不同N-SiC含量的切削液的切削性能。研究结果表明，0.2 wt% N-SiC、0.5 wt% CMC-Na和6 wt% PEG2000的切削液分散性和摩擦性能最好。N-SiC颗粒可以有效降低多晶硅晶片的边缘断裂宽度和表面粗糙度。当切削液中 N-SiC 含量为 0.2 wt% 时，刃口断裂宽度和表面粗糙度达到最低值。