Abstract In(1-x)Al(x)Sb films were deposited on amorphous SiO2 by magnetron sputtering with four different In/Al concentration ratios and the local and extended atomic structure were investigated through extended x-ray absorption fine structure (EXAFS) spectroscopy and grazing incidence x-ray diffraction (GIXRD) analyses, respectively. GIXRD showed the deposited films are strained polycrystalline, however, preserving the cubic symmetry of zinc blende structure due to homogeneous compression. EXAFS analysis of In and Sb atoms in strained In(1-x)Al(x)Sb films provided information about the inter-atomic distance distributions of the first three nearest-neighbor (NN) shells. For the first NN, the average cation-anion distances presented only the alloying effect, resembling the unstrained ternary alloy with a relaxation parameter of e = 0.77 ± 0.01 and e = 0. 79 ± 0.01 for the dilute limit InSb:Al and AlSb:In, respectively, and with the extra structural modifications due to the strain factor appearing in higher coordination shells only. In the second NN shell distance it was observed that the strain effect is more pronounced in In–Al than In–In inter-atomic distance, which is, within uncertainty, independent of strain, evidencing an anisotropy in the process of accommodating the strain in the mixed sublattice, which is favored by bond bending over bond stretching, similarly to unstrained III-V ternary alloys. On the other hand, anion-anion distances exhibited a bimodal distribution, showing a tendency to retain the values of unstrained pure compounds. The third NN shell mean distances vary linearly with concentration. Moreover, the core effect in(1-x)Al(x)Sb alloys was described via EXAFS demonstrating that elastic continuous medium theory is not adequate to describe this system. Using x-ray absorption near edge structure, it was observed that In K-edge position is constant with In/Al ratio in(1-x)Al(x)Sb alloys, whereas Sb K-edge position changed, evidencing its relation with the local atomic arrangement.

中文翻译：

---

应变多晶 In(1-x)Al(x)Sb 合金的局部和扩展原子结构

摘要 通过磁控溅射在四种不同的 In/Al 浓度比下在非晶 SiO2 上沉积 In(1-x)Al(x)Sb 薄膜，并通过扩展 X 射线吸收精细结构 (EXAFS) 光谱研究了局部和扩展原子结构。和掠入射 X 射线衍射 (GIXRD) 分析，分别。GIXRD 显示沉积的薄膜是应变多晶的，然而，由于均匀压缩，保留了闪锌矿结构的立方对称性。应变 In(1-x)Al(x)Sb 薄膜中 In 和 Sb 原子的 EXAFS 分析提供了有关前三个最近邻 (NN) 壳的原子间距离分布的信息。对于第一个 NN，平均阳离子 - 阴离子距离仅呈现合金化效应，类似于松弛参数为 e = 0.77 ± 0 的未应变三元合金。01 和 e = 0. 79 ± 0.01 分别用于稀释极限 InSb:Al 和 AlSb:In，并且由于应变因子仅出现在较高配位壳中而导致的额外结构修改。在第二个 NN 壳距离中，观察到 In-Al 中的应变效应比 In-In 原子间距离更明显，即在不确定性范围内，与应变无关，证明在适应应变的过程中存在各向异性与未应变的 III-V 三元合金类似，混合亚晶格有利于键弯曲而不是键拉伸。另一方面，阴离子 - 阴离子距离表现出双峰分布，显示出保留未应变纯化合物值的趋势。第三个 NN 壳平均距离随浓度线性变化。而且，(1-x)Al(x)Sb 合金中的核心效应通过 EXAFS 描述，证明弹性连续介质理论不足以描述该系统。使用近边缘结构的 x 射线吸收，观察到在 (1-x)Al(x)Sb 合金中，In K 边缘位置随 In/Al 比恒定不变，而 Sb K 边缘位置发生变化，证明其与局部原子排列。