Abstract Atomistic simulations have been used to study the grain boundary (GB) migration in pure Al and Mg-doped Al binary alloys. The results of shearing simulations indicate that the effect of dopants on the GB migration depends on the character of the GB. Negligible influence is found on the migration of the coherent ∑3 GB and only a slight change was found in its strength due to the doping. For the other GBs considered in our study, GB migration was pinned by dopants at the GBs, which results in a strengthening effect. The atomic-level GB migration mechanisms are identified for both shear-coupled GB migration in pure Al and dopants pinning GB migration in Mg-doped Al alloys.

中文翻译：

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镁掺杂剂对铝镁合金晶界迁移的影响

摘要 原子模拟已被用于研究纯铝和掺镁铝二元合金的晶界 (GB) 迁移。剪切模拟的结果表明掺杂剂对 GB 迁移的影响取决于 GB 的特性。发现对相干∑3 GB的迁移影响可忽略不计，并且由于掺杂其强度仅发生轻微变化。对于我们研究中考虑的其他 GB，GB 迁移被 GB 中的掺杂剂固定，这导致了强化效应。原子级 GB 迁移机制被确定为纯 Al 中剪切耦合 GB 迁移和 Mg 掺杂铝合金中的 GB 迁移的掺杂剂。