A self-powered ITO/ZnO/InP heterojunction photodetector has been demonstrated with a 10-nm ZnO interfacial layer deposited by atomic layer deposition as a hole-blocking layer. The presence of a valence band offset between InP and ZnO enhances the photocurrent. The valence band offset between InP and ZnO creates a sufficient barrier for hole movement. Low surface recombination under 520-nm laser irradiation produced maximum photoresponsivity of 44.2 mAW⁻¹ with an illumination power of 1 µW at zero bias. The ZnO-passivated self-powered photodetector shows fast response and improved photo-detecting properties. Furthermore, the highly sensitive photodetectors are demonstrated to record the heart pulse wave by measuring relative changes in blood volume of the finger vessels.

已经证明了自供电的ITO / ZnO / InP异质结光电探测器具有通过原子层沉积法沉积的10 nm ZnO界面层作为空穴阻挡层。InP和ZnO之间的价带偏移的存在增强了光电流。InP和ZnO之间的价带偏移为空穴移动创建了足够的势垒。在520 nm激光照射下的低表面重组产生最大光响应率为44.2 mAW ^-1，在零偏压下的照明功率为1 µW。ZnO钝化的自供电光电探测器显示出快速响应并改善了光电探测性能。此外，高灵敏度的光电探测器被证明可以通过测量手指血管的相对体积来记录心脏脉搏波。