Rare earth (RE = La³⁺, Sm³⁺, Pr³⁺) ion doped Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (RE-PMN-PT) ferroelectric thin films with compositions near the morphotropic phase boundary were grown on the Pt/TiO₂/SiO₂/Si(100) substrate using sol-gel/spin coating method. The phase structure, electrical properties, and photoluminescence performance of thin films were investigated systematically. The highly (100)-preferred orientation was obtained in pure perovskite Sm-PMN-0.30PT thin films with an average grain size of 131 nm. After 2.5% Sm³⁺ doping, the PMN-0.30PT thin films exhibited a triple enhancement of dielectric permittivity with a maximum value of 3500 at 1 kHz, a low dielectric loss of 1.3%, and high remanent polarization of 17.5 μC/cm² at room temperature. In visible light and near-infrared band, the transmittance rate increased with PT content and showed the highest value of 85% in 2.5%Sm-PMN-0.31PT. In addition, the films presented strong red-orange emission at 599 nm, which was sensitively in temperature range of 248–273 K corresponding to the rhombohedral to monoclinic phase transition temperature.

稀土（RE = La ³⁺，Sm ³⁺，Pr ³⁺）离子掺杂的Pb（Mg _1/3 Nb _2/3）O ₃ -PbTiO ₃（RE-PMN-PT）铁电薄膜使用溶胶-凝胶/旋涂法在Pt / TiO ₂ / SiO ₂ / Si（100）衬底上生长相界。系统地研究了薄膜的相结构，电性能和光致发光性能。在平均晶粒尺寸为131 nm的纯钙钛矿Sm-PMN-0.30PT薄膜中获得了高度（100）优先的取向。2.5％Sm后³⁺掺杂后，PMN-0.30PT薄膜的介电常数提高了三倍，在1 kHz时最大值达到3500，在室温下介电损耗低至1.3％，剩余极化率高，达到了17.5μC/ cm ²。在可见光和近红外波段，透射率随PT含量的增加而增加，在2.5％Sm-PMN-0.31PT中显示最高值为85％。此外，这些薄膜在599 nm处呈现出强烈的红橙色发射，在248-273 K的温度范围内敏感，对应于菱形到单斜相的转变温度。