Zinc oxide (ZnO) has been widely considered as a promising candidate in electro-chemical devices due to the high electrical transport performance and easy-fabrication. However, the active chemical properties of ZnO nanobelts restrict their application in practical electro-chemical devices. Here, we adopted an indium doping strategy to improve the corrosion resistance of ZnO nanobelts. Compared with other atomic doping methods, the indium doping method not only formed several layers of indium atoms in the body of ZnO nanobelts but also created a Zn_xIn_1−xO passivated layer on the ZnO nanobelt surface. After doping indium atoms into ZnO nanobelts, the self-corrosion potential increased and the self-corrosion current decreased which greatly reduced its corrosion rate in the electrochemical solution. Furthermore, the electrical transport properties of indium-doped zinc oxide (In–ZnO) nanobelts presented ultrahigh stability even after being soaked in the electrochemical solution for 43 hours. The enhanced anticorrosive quasi-2D ZnO nanobelts offer a promising development of ZnO-based electro-chemical devices.

中文翻译：

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电化学环境中的超稳定ZnO纳米带

氧化锌（ZnO）由于具有较高的电传输性能和易于制造的特性而被广泛认为是电化学设备中有希望的候选者。但是，ZnO纳米带的化学活性限制了它们在实际电化学设备中的应用。在这里，我们采用铟掺杂策略来提高ZnO纳米带的耐腐蚀性。与其他原子掺杂方法相比，铟掺杂方法不仅在ZnO纳米带体内形成了几层铟原子，而且还形成了Zn _x In _{1- x}ZnO纳米带表面上的O钝化层。将铟原子掺杂到ZnO纳米带中后，自腐蚀电位增加，自腐蚀电流降低，这大大降低了其在电化学溶液中的腐蚀速率。此外，即使将铟掺杂的氧化锌（In–ZnO）纳米带在电化学溶液中浸泡43小时后，其电传输性能也表现出超高的稳定性。增强型防腐蚀准2D ZnO纳米带提供了基于ZnO的电化学设备的有希望的发展。