A class of solution-processable, donor–acceptor-decorated dithienophosphole oxide derivatives has been successfully synthesized and employed to fabricate solution-processed resistive memory devices with a simple indium–tin oxide/active layer/aluminum structure. The intramolecular charge transfer (ICT) characters of the donor–acceptor dithienophosphole oxide derivatives were established from photophysical, solvatochromic, and computational studies. The number of conductance states in the organic memory devices was found to be altered by slight changes in molecular structures. The mechanism for the tristable memory property of the devices was proposed based on the correlation of the extent of ICT characters and the computed structural parameters of the compounds, current–voltage characteristics of the devices and the fitting to theoretical conduction models. These findings offer important insights for the realization of multilevel resistive memory devices through the modification of the ICT character of the active compounds.

中文翻译：

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用于多级有机电阻记忆体的溶液可加工的供体-受体二硫代磷酰氧化物衍生物的设计与合成

已经成功地合成了一类可溶液处理的，供体-受体修饰的二硫代磷酰氧化物衍生物，并用于制造具有简单的铟锡氧化物/活性层/铝结构的溶液处理的电阻存储器件。供体-受体二硫代磷酰氧化物的分子内电荷转移（ICT）特征是通过光物理，溶剂变色和计算研究确定的。发现有机存储器件中的电导状态数通过分子结构的微小变化而改变。基于信息通信技术特征范围与化合物计算结构参数的相关性，提出了器件的三稳态存储特性的机理。器件的电流-电压特性以及对理论传导模型的拟合。这些发现为通过改变活性化合物的ICT特性实现多级电阻式存储设备提供了重要的见识。