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Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al2O3-Passivated High-k HfGdOx Dielectrics
ACS Applied Electronic Materials ( IF 4.7 ) Pub Date : 2020-11-03 , DOI: 10.1021/acsaelm.0c00763
Yongchun Zhang 1, 2 , Yangjian Lin 3 , Gang He 1, 3 , Binghui Ge 3 , Wenjun Liu 4
Affiliation  

High-speed operation and low-power-consumption requirements have accelerated the development of thin-film transistors (TFTs) with exploration of gate dielectrics. In this work, the integration of all-sputtering-derived HfGdO high-k gate dielectrics with amorphous InGaZnO (a-InGaZnO) films has been reported, yielding significant improvements in the performance of a-InGaZnO TFTs. By adjusting the multilayer dielectric sequence, TFT device performance can be precisely manipulated. It has been detected that a-InGaZnO TFTs with an optimized Al2O3/HfGdO dielectric configuration have demonstrated superior electrical performance, including a high field-effect mobility (μFE) of 23.3 cm2·V–1·S–1, a large on/off current ratio of 1.2 × 107, a low subthreshold swing of 0.09 V/dec, and good stability under bias stress. Finally, a low-voltage-operated resistor-loaded unipolar inverter has been assembled on the base of Al2O3/HfGdO/a-InGaZnO TFTs, demonstrating full swing characteristics and high gain of ∼20. All of the experimental results indicate promising potentials for all-sputtering-derived Al2O3/HfGdO laminated dielectrics toward the achievement of low-cost, low-power-consumption, and large-area all-oxide optoelectronics.

中文翻译:

使用ALD衍生的Al 2 O 3钝化的高k HfGdO x介电材料来提高a-InGaZnO薄膜晶体管的平衡性能

高速操作和低功耗要求通过探索栅极电介质加速了薄膜晶体管(TFT)的发展。在这项工作中,已经报道了全溅射衍生的HfGdO高k栅极电介质与非晶InGaZnO(a-InGaZnO)薄膜的集成,从而显着提高了a-InGaZnO TFT的性能。通过调节多层介电序列,可以精确地控制TFT器件的性能。经检测,具有优化的Al 2 O 3 / HfGdO介电结构的a-InGaZnO TFT具有出色的电气性能,包括23.3 cm 2 ·V –1 ·S –1的高场效应迁移率(μFE,1.2 / 10 7的大开/关电流比,0.09 V / dec的低亚阈值摆幅以及在偏置应力下的良好稳定性。最后,在Al 2 O 3 / HfGdO / a-InGaZnO TFT的基础上组装了一个低压电阻加载的单极逆变器,具有全摆幅特性和约20的高增益。所有的实验结果表明,全溅射衍生的Al 2 O 3 / HfGdO叠层电介质有望实现低成本,低功耗和大面积的全氧化物光电。
更新日期:2020-11-25
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