Here, we report about the synthesis, photoluminescence and optoelectronic characteristics of Ga_1-xTb_xP QDs developed using 2,7-tetrakis(-N,N-di-p-methoxyphenyl-amine)9-spirobifluorene assisted hydrothermal approach for lasing and optical gain devices. The developed Ga_1-xTb_xP QDs disclosed cubic crystalline structural phases and the particle size increased from 3 nm to 9.4 nm. The optical bandgap changed from 3.2 eV to 2.64 eV. The Tb-dopant resulted in multicolor modulation of the emission luminescent spectra from 414 nm to 513 nm. The photoluminescence emission spectra were amplified by 10 times and the quantum yield increased from 16 to 86 %. It was found that the Tb-dopant created sublevels below the GaP conduction bands which behaved like fluorescent centers. The amplification of emitted light photons and the unique luminescent characteristics that have been obtained may raise the opportunity to employ the Ga_1-xTb_xP QDs as promising optical amplifiers and lasing materials.

在这里，我们报道有关使用2,7-四（-N，N -N-二-对甲氧基苯基-胺）9-螺双芴辅助水热法开发的Ga _1-x Tb _x P QD的合成，光致发光和光电特性和光学增益设备。研发的Ga _1-x Tb _xP QD揭示了立方晶体结构相，粒径从3 nm增加到9.4 nm。光学带隙从3.2 eV变为2.64 eV。掺Tb导致发射发光光谱从414 nm到513 nm的多色调制。光致发光发射光谱放大了10倍，量子产率从16％提高到86％。已经发现，掺Tb的掺杂剂在GaP导带以下产生了子级，其行为类似于荧光中心。所获得的发射光子的放大和独特的发光特性可能增加使用Ga _1-x Tb _x P QD作为有前途的光放大器和激光材料的机会。