Thin amorphous films of Cu_x(Ge₃Se₇)_100-x (0 ≤ x ≤ 12 at. %) were prepared on glass substrates by the thermal evaporation method. The dc electrical resistivity (ρ_dc) and current-voltage (I–V) characteristics were measured within the temperature range from 190 to 420 K for the prepared films. For x ≤ 6 at. %, the electrical conductivity (σ_dc) shows three temperature regimes arise from three different conduction mechanisms, while for x = 9 and 12 at. %, only two distinct regimes were observed. The Fermi energy (E_f) and the charged carriers' mobility (μ_o) of the studied thin films were estimated. The variation of current density (J) as a function of electric field (E) indicating Ohmic behavior for low applied electric field (E < 2.4 × 10⁵ V/cm). Above such electric field (at higher voltage V > 12 V), a space charge limited conduction (SCLC) occurs. By fitting the experimental data according to the SCLC, the density of localized states (DOS) close to Fermi level was estimated. The increasing of the DOS with an increase of the Cu content can be ascribed to increasing the defect states.

铜的薄的无定形薄膜_X（葛₃硒₇）_100-x中（0≤ X ≤12原子％）通过热蒸发方法在玻璃基板上制备。直流电阻率（ρ _DC）和电流-电压（I-V）特性的温度范围内测量从190到420 K中制备的膜。对于x≤6 at。％，则导电率（σ _DC）示出了三个温度制度从三个不同的传导机制出现，而对于x = 9和12在。％，仅观察到两种不同的方案。费米能（Ë _˚F）和带电载流子的移动性（μ _Ò估计了所研究的薄膜的）。电流密度（J）随电场（E）的变化，表明低施加电场（E <2.4×10 ⁵ V / cm）时的欧姆行为。在这样的电场之上（在更高的电压V> 12 V时），会发生空间电荷受限传导（SCLC）。通过根据SCLC拟合实验数据，可以估算接近费米能级的局部态（DOS）的密度。DOS随Cu含量的增加而增加可归因于缺陷状态的增加。