Abstract Heterogeneous epitaxy of e-Ga2O3 films on c-plane sapphire was carried out by metal-organic chemical vapor deposition. The crystal quality and epitaxial relationship were investigated by X-ray diffraction and transmission electron microscopy. The effects of the thickness changing on crystal quality and morphology of e-Ga2O3 films were analyzed. A higher quality e-Ga2O3 film with full width at half maxima of 0.46° was obtained at 480 nm. A e-Ga2O3 metal-semiconductor-metal solar blind ultraviolet photodetector with large on/off ratio of over 2 × 103, peak responsivity of 146 A/W and detectivity of 1.2 × 1013 Jones was fabricated, indicating good optical properties of the e-Ga2O3 film.

中文翻译：

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MOCVD和日盲紫外光电探测器在c-蓝宝石上生长的ε-Ga2O3薄膜的晶体特性

摘要 采用金属有机化学气相沉积法在c面蓝宝石上异质外延e-Ga2O3薄膜。通过X射线衍射和透射电子显微镜研究晶体质量和外延关系。分析了厚度变化对e-Ga2O3薄膜晶体质量和形貌的影响。在 480 nm 处获得了更高质量的 e-Ga2O3 薄膜，其半峰全宽为 0.46°。制备了具有超过 2 × 103 大开关比、146 A/W 峰值响应和 1.2 × 1013 Jones 探测率的 e-Ga2O3 金属-半导体-金属日盲紫外光电探测器，表明该 e-Ga2O3 具有良好的光学性能。 Ga2O3 薄膜。