A detailed interpretation of exciton lines caused by the presence of a lithium impurity in ZnO crystals (T = 4.2 K) was carried out. The 368.5-nm line is caused by radiative recombination of excitons bound on neutral donor states \( {Li}_i^{\times } \). The 371.2-nm line is caused by the same process but occurring simultaneously with the transition of the donor to the excited state. The 368.2-nm line occurs when excitons bound on ionized \( {Li}_i^{+} \) states emit. The 369.7-nm line is the emission of excitons bound on acceptor complexes of the form (\( {Zn}_i^{+}{Li}_{Zn}^{\mid } \)), (\( {In}_{Zn}^{+}{Li}_{Zn}^{\mid } \)), (\( {Li}_i^{+}{Li}_{Zn}^{\mid } \)), etc. The measurements also made it possible to calculate the ionization energy of shallow donors \( {Li}_i^{\times } \) as E_d = 0.033 eV. Thus, a method for exciton spectroscopy of lithium states affecting the optical and electrophysical characteristics of zinc oxide has been developed.

对ZnO晶体中存在锂杂质（T = 4.2 K）引起的激子线进行了详细的解释。368.5 nm的线是由绑定在中性施主态\（{Li} _i ^ {\ times} \）上的激子的辐射复合引起的。371.2 nm线是由相同的过程引起的，但与施主向激发态的转变同时发生。当束缚在离子化的（{Li} _i ^ {+} \）上的激子发出时，就会出现368.2 nm的谱线。369.7 nm线是激发子以束缚形式发射的激子，其形式为（\（{Zn} _i ^ {+} {Li} _ {Zn} ^ {\ mid} \）），（\（{In} _ {Zn} ^ {+} {Li} _ {Zn} ^ {\ mid} \）），（\（{Li} _i ^ {+} {Li} _ {Zn} ^ {\ mid} \）测量还使得可以计算出浅施主的电离能\（{Li} _i ^ {\ times} \），E _d = 0.033 eV。因此，已经开发出一种用于影响氧化锌的光学和电物理特性的锂态的激子光谱学的方法。