Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due to its critical applications, especially in safety and space detection. A DUV photodetector based on wide-bandgap semiconductors provides a subversive scheme to simplify the currently mature DUV detection system. As an ultra-wide-bandgap (4.4–5.3 eV) semiconductor directly corresponding to the DUV solar-blind waveband, Ga₂O₃ has an important strategic position in the prospective layout of semiconductor technology owing to its intrinsic characteristics of high breakdown electric field, excellent tolerance of high/low temperature, high resistance to radiation, and rich material systems. As the only native substrate that can be fabricated from melt-grown bulk single crystals, β-Ga₂O₃ has attracted a lot of attention both in power-electronic and photo-electronic devices. In addition, other metastable phases (e.g. α, ϵ, γ) of Ga₂O₃ have attracted great interest due to their unique properties. In this work, we discuss the advances in achieving bulk and film Ga₂O₃ materials with different crystal phases. In addition, the latest achievements with polymorphous Ga₂O₃-based solar-blind photodetectors (SBPDs) and the methods to enhance their performance, including doping, annealing, and transparent electrodes, are also discussed. Furthermore, as the most desirable application, DUV imaging technologies based on Ga₂O₃ SBPDs are systematically summarized. Finally, conclusions regarding recent advances in Ga₂O₃ SBPDs, remaining challenges, and prospects are presented and discussed.

深紫外 (DUV) 日盲波段的光检测因其关键应用而引起了人们的兴趣，尤其是在安全和空间检测方面。基于宽带隙半导体的深紫外光电探测器为简化目前成熟的深紫外检测系统提供了一种颠覆性的方案。Ga ₂ O ₃作为直接对应于深紫外日盲波段的超宽带隙（4.4-5.3 eV）半导体，由于其固有的高击穿电场特性，在半导体技术的前瞻性布局中具有重要的战略地位。 ，优异的高/低温耐受性，高抗辐射性和丰富的材料系统。作为唯一可以由熔融生长的块状单晶制造的原生衬底，β-Ga ₂ O ₃在电力电子和光电器件中都引起了广泛的关注。此外，Ga ₂ O _{3 的}其他亚稳态相（例如α、ϵ、γ）由于其独特的性质而引起了极大的兴趣。在这项工作中，我们讨论了在实现具有不同晶相的块状和薄膜 Ga ₂ O ₃材料方面的进展。此外，多晶型Ga ₂ O ₃的最新成果还讨论了基于太阳盲光电探测器 (SBPD) 和提高其性能的方法，包括掺杂、退火和透明电极。此外，作为最理想的应用，系统总结了基于Ga ₂ O ₃ SBPD 的DUV 成像技术。最后，提出并讨论了关于 Ga ₂ O ₃ SBPD 的最新进展、剩余挑战和前景的结论。