Power electronics are crucial elements in more-electric aircraft (MEA) applications. Existing hardware is almost exclusively silicon (Si)-based. However, recent advances in semiconductor technology yielded silicon carbide (SiC) components with current ratings suitable for aerospace applications. These devices have much strength that can increase power density and improve performance over Si-based hardware. High switching speeds are characteristic of SiC devices, and there is much concern about their impact on electromagnetic interference (EMI). This may necessitate larger EMI filters to comply with EMI standards, which would decrease power density and negate some of SiC’s benefits. The following research explores the tradeoff between efficiency and EMI. It compares the performance of two high-power three-phase converters: one built from SiC MOSFETs and the other from Si IGBTs. The test setup consists of a 250-kW drive stand capable of sourcing and regeneratively sinking power as well as a 40-kVA aerospace rated machine. Experimental results are obtained at a bus voltage of 270-Vdc with power levels exceeding 1.5 p.u. The findings demonstrate comparable EMI performance for Si and SiC under MIL-STD-461 with the SiC converter achieving higher efficiency.

中文翻译：

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两电平航天电机驱动应用中Si和SiC的EMI和效率比较

电力电子设备是多电飞机 (MEA) 应用中的关键要素。现有硬件几乎完全基于硅 (Si)。然而，半导体技术的最新进展产生了具有适用于航空航天应用的额定电流的碳化硅 (SiC) 组件。这些设备具有很大的优势，可以提高功率密度并提高基于硅的硬件的性能。高开关速度是 SiC 器件的特征，人们非常担心它们对电磁干扰 (EMI) 的影响。这可能需要更大的 EMI 滤波器来符合 EMI 标准，这会降低功率密度并抵消 SiC 的一些优势。以下研究探讨了效率和 EMI 之间的权衡。它比较了两个大功率三相转换器的性能：一个由 SiC MOSFET 构建，另一个由 Si IGBT 构建。测试装置包括一个 250 千瓦的驱动支架，能够提供和再生吸收功率，以及一台 40 千瓦的航空级机器。实验结果是在 270-Vdc 的总线电压和超过 1.5 pu 的功率水平下获得的。结果表明，在 MIL-STD-461 下，Si 和 SiC 的 EMI 性能相当，而 SiC 转换器实现了更高的效率。