Adding passive components in a conventional IGBT gate driver is a simple method to reduce transient current/voltage spikes during switching, but the extra devices and power loss make them less attractive. Alternatively, active gate drivers can improve the switching behavior, but are limited to specific devices and applications from the increased complexity of functions and feedback topology. This article reports a simple design for a general purpose gate driver methodology to reduce the peak reverse recovery current and over-voltage. The proposed topology was verified using a foundry 0.25- $\mu \text{m}$ BCD technology and experimental testing Remarkable improvements of crucial current overshoot during turn-on, voltage overshoot during turn-off, and the associated switching loss are demonstrated using novel dual-phase turn-on and turn-off gate controls.

中文翻译：

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实现具有双相开启/关闭栅极控制的 IGBT 栅极驱动器

在传统的 IGBT 栅极驱动器中添加无源元件是一种减少开关过程中瞬态电流/电压尖峰的简单方法，但额外的器件和功率损耗使它们的吸引力降低。或者，有源栅极驱动器可以改善开关行为，但由于功能和反馈拓扑的复杂性增加，因此仅限于特定设备和应用。本文报告了一种用于降低峰值反向恢复电流和过压的通用栅极驱动器方法的简单设计。使用代工厂 0.25- $\mu \text{m}$ BCD 技术和实验测试验证了所提出的拓扑结构 显着改善了导通期间的关键电流过冲、关断期间的电压过冲，