The memory window of floating gate (FG) type non‐volatile memory (NVM) devices is a fundamental figure of merit used not only to evaluate the performance, such as retention and endurance, but also to discuss the feasibility of advanced functional memory devices. However, the memory window of 2D materials based NVM devices is historically determined from round sweep transfer curves, while that of conventional Si NVM devices is determined from high and low threshold voltages (V_ths), which are measured by single sweep transfer curves. Here, it is elucidated that the memory window of 2D NVM devices determined from round sweep transfer curves is overestimated compared with that determined from single sweep transfer curves. The floating gate voltage measurement proposed in this study clarifies that the V_ths in round sweep are controlled not only by the number of charges stored in floating gate but also by capacitive coupling between floating gate and back gate. The present finding on the overestimation of memory window enables to appropriately evaluate the potential of 2D NVM devices.

中文翻译：

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通过测量浮栅电压了解基于2D材料的浮栅型存储器件的存储窗口高估

浮栅（FG）型非易失性存储器（NVM）设备的存储器窗口是一项基本的品质因数，它不仅可用于评估性能（例如保留性和耐用性），而且还可用于讨论高级功能性存储器设备的可行性。然而，历史上基于圆形扫描转移曲线确定基于2D材料的NVM器件的存储窗口，而常规Si NVM器件的存储窗口由通过单扫描转移曲线测量的高和低阈值电压（V _th s）确定。在此说明，与根据单次扫描传输曲线确定的2D NVM设备的存储窗口相比，高估了从循环扫描传输曲线确定的2D NVM设备的存储窗口。这项研究中提出的浮栅电压测量澄清了圆形扫描中的V _th s不仅受浮栅中存储的电荷数量的控制，还受浮栅和背栅之间的电容耦合的控制。关于存储器窗口的高估的当前发现使得能够适当地评估2D NVM设备的潜力。