Abstract The study deals with the handling of thin wafers in 3D integration. It concerns the fabrication of 300 mm wafers in industrial tools. Usually, the manufacturing is based on a temporary bonding process performed at 200 °C using a thermoplastic adhesive. In that condition bonding, thinning and dismounting are satisfactory. Moreover, the adhesive flattening during bonding results in an excellent thickness uniformity of the bonded pairs, with a small total thickness variation (TTV) value suitable for 3D integration. If the temperature is 150 °C or lower, the adhesive thickness uniformity is not acceptable anymore. An innovative temporary bonding process at low temperature has thus been developed. It consists in a carrier fabrication with highly uniform adhesive thickness. The standard coated adhesive is flattened with a first reversible temporary bonding at 210 °C. After a first dismounting, this carrier is then bonded to the target device wafer with a low bonding temperature, from 110 °C to 150 °C. Due to the pre-flattening, 80 μm thick silicon films with an excellent TTV value can thus be obtained even with a low bonding temperature required by the device wafer. Moreover, after the device wafer thinning, the final dismounting can be performed without any antisticking layer.

中文翻译：

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用于制造薄晶片的临时聚合物键合：一种创新的低温工艺

摘要 本研究涉及 3D 集成中薄晶圆的处理。它涉及在工业工具中制造 300 毫米晶圆。通常，制造基于使用热塑性粘合剂在 200 °C 下进行的临时粘合过程。在这种情况下，粘合、减薄和拆卸都令人满意。此外，粘合过程中粘合剂变平导致粘合对的厚度均匀性极佳，总厚度变化 (TTV) 值很小，适合 3D 集成。如果温度为 150 °C 或更低，则粘合剂厚度均匀性不再可接受。因此开发了一种创新的低温临时粘合工艺。它包括具有高度均匀粘合剂厚度的载体制造。标准涂层粘合剂在 210 °C 下通过第一次可逆临时粘合压平。在第一次拆卸后，该载体然后以 110 °C 到 150 °C 的低键合温度键合到目标器件晶圆上。由于预平坦化，因此即使在器件晶片所需的低键合温度下也可以获得具有优异 TTV 值的 80 μm 厚的硅膜。此外，在器件晶圆减薄后，可以在没有任何防粘层的情况下进行最终拆卸。