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Do serial order short-term memory and long-term learning abilities predict spelling skills in school-age children?
Cognition ( IF 4.011 ) Pub Date : 2020-11-03 , DOI: 10.1016/j.cognition.2020.104479
Laura Ordonez Magro 1 , Steve Majerus 2 , Lucie Attout 2 , Martine Poncelet 2 , Eleonore H M Smalle 3 , Arnaud Szmalec 4
Affiliation  

Compared to most human language abilities, the cognitive mechanisms underlying spelling have not been as intensively investigated as reading and therefore remain to this day less well understood. The current study aims to address this shortcoming by investigating the contribution of serial order short-term memory (STM) and long-term learning (LTL) abilities to emerging spelling skills. Indeed, although there are several reasons to assume associations between serial order memory and spelling abilities, this relationship has hardly been investigated empirically. In this study, we hypothesized that serial order STM plays an important role in spelling novel words, for which children are supposed to rely on a sequential nonlexical spelling procedure. Serial order LTL was hypothesized to be involved in the creation of more stable orthographic representations allowing children to spell (regular and irregular) words by using a lexical spelling strategy based on the direct access to orthographic representations stored in long-term memory. To assess these hypotheses, we conducted a longitudinal study in which we tested a sample of 116 French-speaking children at first grade and two years later at third grade of primary school. At first grade, we administered tasks that were specifically designed to maximize STM and LTL abilities for serial order information. At third grade, we assessed spelling abilities using irregular word, regular word, and pseudoword writing-to-dictation tasks. Bayesian regression analyses showed that pseudoword, but also irregular word spelling was best predicted by serial order STM, while regular word spelling was similarly predicted by both serial order STM and LTL.



中文翻译:

连续顺序的短期记忆和长期学习能力是否可以预测学龄儿童的拼写技能?

与大多数人类语言能力相比,构成拼写的认知机制尚未像阅读一样深入地研究,因此至今仍未得到很好的理解。当前的研究旨在通过研究序列顺序短期记忆(STM)和长期学习(LTL)能力对新兴拼写技能的贡献来解决这一缺陷。确实,尽管有多种理由可以假定序列顺序记忆和拼写能力之间存在关联,但是这种关系几乎没有经过经验研究。在这项研究中,我们假设序列顺序STM在拼写新单词方面起着重要作用,为此,儿童应依赖顺序的非词汇拼写程序。假设序列顺序LTL参与了更稳定的正交表示形式的创建,允许儿童通过基于直接访问长期记忆中存储的正交表示形式的词汇拼写策略来拼写(规则和不规则)单词。为了评估这些假设,我们进行了一项纵向研究,在该研究中,我们测试了116名小学一年级和两年后三年级的法语儿童的样本。在一年级时,我们执行了专门设计的任务,这些任务旨在最大程度地提高STM和LTL的序列订单信息能力。在三年级时,我们使用不规则单词,常规单词和伪单词编写到听写任务评估了拼写能力。贝叶斯回归分析表明,伪字,

更新日期:2020-11-03
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