Abstract

The technology of producing a Ge–GeS:Nd heterojunction and the relative spectral characteristics of the quantum efficiency of the fabricated heterojunction are investigated at different γ-irradiation doses. It is found that the photosensitivity increases at a dose of 30 krad in the spectral range of 0.4–2.0 μm. With increasing the radiation dose to 100 krad, the heterojunction photosensitivity decreases significantly.

中文翻译：

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Ge–GeS：Nd异质结的制备及光谱特性研究

摘要

研究了在不同的γ辐照剂量下Ge-GeS：Nd异质结的制备技术以及所制备异质结的量子效率的相对光谱特征。研究发现，在0.4–2.0μm的光谱范围内，光敏性在剂量为30 krad时会增加。随着辐射剂量增加到100 krad，异质结光敏性显着降低。