Abstract

The energy spectrum of the exciton and carrier states in a shallow GaAs/AlGaAs quantum well is experimentally studied by means of the spectroscopy of the nonradiative broadening of exciton resonances and the spectroscopy of the photoluminescence excitation. The observed peculiarities of the spectra are treated using the numerical solution of the one-dimensional Schrödinger equation for free carriers and three-dimensional equation for excitons in the quantum well. The conduction and valence band offsets in the shallow GaAs quantum well are determined.

中文翻译：

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激子共振非辐射展宽光谱探明浅GaAs / AlGaAs量子阱中的能谱

摘要

利用激子共振的非辐射展宽光谱和光致发光激发光谱，通过实验研究了浅GaAs / AlGaAs量子阱中激子和载流子态的能谱。使用一维Schrödinger方程（对于自由载流子）和三维方程（对于激子）的数值解，对观察到的光谱特性进行处理。确定了浅GaAs量子阱中的导带和价带偏移。