Abstract

The degree of disordering and the thickness d of disordered layers and their effect on the band gap E_g of single-crystal Si(111) under Ar⁺-ion bombardment are studied for the first time. It is shown that the d value at ion energies of E₀ = 1 and 2 keV is ~(100–120) and ~(150–160) Å, respectively. In this case, the density of states of electrons in the Si(111) valence band significantly changes, the light transmittance decreases to K = 55–60%, and the E_g value increases by ~10%. Under Ni⁺-ion bombardment, surface disordering is accompanied by a sharp change in the composition of the surface layers and, as a result, the K value decreases to 5–10%. After heating at T = 900 K, nanocrystals (at doses of D ≤ 10¹⁵ cm^–2) and NiSi₂ nanofilms (at D = 6 × 10¹⁶ cm^–2) are formed.

中文翻译：

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薄表面层的无序性对Si（111）的电子和光学性质的影响

摘要

首次研究了Ar ⁺离子轰击下无序度和无序层厚度d及其对单晶Si（111）带隙E _g的影响。结果表明， 在离子能量E ₀ = 1和2 keV处的d值分别为〜（100–120）和〜（150–160）Å。在这种情况下，Si（111）价带中的电子态密度显着变化，透光率降低到K = 55-60％，E _g值增加约10％。在镍^+下离子轰击，表面无序伴随着表面层组成的急剧变化，结果，K值降低到5-10％。在加热后Ť = 900 K，纳米晶体（在剂量d ≤10 ¹⁵厘米^-2）和硅化镍₂纳米薄膜（在d = 6×10 ¹⁶厘米^-2）形成。