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Synthesis of Silicon-Carbide Nanoparticles by the Laser Pyrolysis of a Mixture of Monosilane and Acetylene
Semiconductors ( IF 0.7 ) Pub Date : 2020-11-02 , DOI: 10.1134/s1063782620110081 I. A. Ershov , L. D. Iskhakova , V. I. Krasovskii , F. O. Milovich , S. I. Rasmagin , V. I. Pustovoi
中文翻译:
甲硅烷与乙炔混合物的激光热解法合成碳化硅纳米粒子
更新日期:2020-11-03
Semiconductors ( IF 0.7 ) Pub Date : 2020-11-02 , DOI: 10.1134/s1063782620110081 I. A. Ershov , L. D. Iskhakova , V. I. Krasovskii , F. O. Milovich , S. I. Rasmagin , V. I. Pustovoi
Abstract
The conditions of the laser-stimulated synthesis reaction of silicon-carbide nanoparticles are determined and their characterization is performed. The laser synthesis reaction of SiC particles in the gas phase is observed with the SiH4/C2H2 flow ratio in the range of 1.6–3.2. The temperature in the reaction-zone region is ~1400–1500°C. Silicon-carbide nanoparticles ~6 nm in diameter are fabricated and their composition is investigated.
中文翻译:
甲硅烷与乙炔混合物的激光热解法合成碳化硅纳米粒子
摘要
确定了碳化硅纳米颗粒的激光激发合成反应的条件,并进行了表征。SiH 4 / C 2 H 2流量比在1.6-3.2范围内,观察到气相SiC粒子的激光合成反应。反应区的温度约为1400–1500°C。制备了直径约6 nm的碳化硅纳米颗粒,并研究了其组成。