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Design and optimization of junctionless-based devices with noise reduction for ultra-high frequency applications
Applied Physics A ( IF 2.7 ) Pub Date : 2020-11-01 , DOI: 10.1007/s00339-020-04092-2 Krishan Kumar , Ashish Raman , Balwinder Raj , Sarabdeep Singh , Naveen Kumar
Applied Physics A ( IF 2.7 ) Pub Date : 2020-11-01 , DOI: 10.1007/s00339-020-04092-2 Krishan Kumar , Ashish Raman , Balwinder Raj , Sarabdeep Singh , Naveen Kumar
This paper offers the study of the noise performance of four devices namely junctionless dual-gate FET (JL-DGFET), junctionless nanowire FET (JL-NWFET), charge-plasma based dopingless dual-gate FET (DL-DGFET) and dopingless nanowire FET (DL-NWFET). This work examines the maximum Noise-Figure (NFmax.), Auto-correlation factor ( )/( ), cross-correlation factor ( ), and output impedance (real Zo). To understand the performance of devices, analog characteristics of all four devices and effect on these characteristics with the variations of different device structure parameters are analyzed and compared. Internal physics of device is understood by device design parameters such as electric field, channel potential, carrier mobility and carrier concentration. It is observed from the simulated results that JL-DGFET has better noise performance, highest ION/IOFF current ratio than other devices.
中文翻译:
用于超高频应用的具有降噪功能的基于无结器件的设计和优化
本文提供了四种器件的噪声性能研究,即无结双栅极 FET (JL-DGFET)、无结纳米线 FET (JL-NWFET)、基于电荷等离子体的无掺杂双栅极 FET (DL-DGFET) 和无掺杂纳米线场效应管 (DL-NWFET)。这项工作检查了最大噪声系数 (NFmax.)、自相关因子 ( )/( )、互相关因子 ( ) 和输出阻抗(实数 Zo)。为了了解器件的性能,对所有四种器件的模拟特性以及不同器件结构参数的变化对这些特性的影响进行了分析和比较。器件的内部物理特性通过器件设计参数(例如电场、沟道电势、载流子迁移率和载流子浓度)来理解。从仿真结果可以看出,JL-DGFET 具有更好的噪声性能,
更新日期:2020-11-01
中文翻译:
用于超高频应用的具有降噪功能的基于无结器件的设计和优化
本文提供了四种器件的噪声性能研究,即无结双栅极 FET (JL-DGFET)、无结纳米线 FET (JL-NWFET)、基于电荷等离子体的无掺杂双栅极 FET (DL-DGFET) 和无掺杂纳米线场效应管 (DL-NWFET)。这项工作检查了最大噪声系数 (NFmax.)、自相关因子 ( )/( )、互相关因子 ( ) 和输出阻抗(实数 Zo)。为了了解器件的性能,对所有四种器件的模拟特性以及不同器件结构参数的变化对这些特性的影响进行了分析和比较。器件的内部物理特性通过器件设计参数(例如电场、沟道电势、载流子迁移率和载流子浓度)来理解。从仿真结果可以看出,JL-DGFET 具有更好的噪声性能,