A method based on the scaling properties of the Boltzmann transport equation is proposed to identify the dominant scattering mechanisms that affect charge transport in a semiconductor. This method uses drift velocity data of mobile charges at different lattice temperatures and applied electric fields and takes into account the effect of carrier heating. By performing time‐of‐flight measurements on single‐crystalline diamond, hole and electron drift velocities are measured under low‐injection conditions within the temperature range 10–300 K. Evaluation of the data using the proposed method identifies acoustic phonon scattering as the dominant scattering mechanism across the measured temperature range. The exception is electrons at 100–200 K where conduction‐band valley repopulation has a prominent effect. At temperatures below ≈80 K, where valley polarization is observed for electrons, transport dominated by acoustic phonon scattering is observed in different valleys separately. The scaling model is additionally tested on data from highly resistive gallium arsenide samples to demonstrate the versatility of the method. In this case, impurity scattering can be ruled out as the dominant scattering mechanism in the samples for the temperature range 80–120 K.

中文翻译：

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载流子散射机制：通过玻耳兹曼输运方程的缩放性质进行识别

提出了一种基于玻耳兹曼输运方程的缩放性质的方法，以识别影响半导体中电荷输运的主要散射机制。该方法使用了在不同晶格温度和施加电场下移动电荷的漂移速度数据，并考虑了载流子加热的影响。通过对单晶金刚石进行飞行时间测量，可以在10-300 K的温度范围内的低注入条件下测量空穴和电子漂移速度。使用所提出的方法对数据进行评估可确定声子声子散射为主要因素测量温度范围内的散射机制。例外是在100–200 K的电子，在那里传导带谷的重新填充具有显着影响。在≈80K以下的温度下，在观察到电子的波谷极化的情况下，分别在不同的波谷中观察到以声子声子散射为主的传输。缩放模型还对来自高电阻砷化镓样品的数据进行了测试，以证明该方法的多功能性。在这种情况下，可以排除80-120 K温度范围内样品中杂质的主要散射机制。