The impact of source doping gradient (SDG) in terms of lateral straggle (σ) on the performance of germanium epitaxial layer double-gate tunnel field effect transistor (ETL-DGTFET) was demonstrated by a simulation study. The non-zero tilt angle used in the ion implantation during the device fabrication process extends the implanted dopant atoms to the channel region from the source and drain which affects the performance of a device during both the ON- and OFF-states. To get a deeper insight of the impact of σ on the device performance, various DC performance parameters like Ion/Ioff ratio, average Subthreshold Slope (SSavg), and analog/RF figure of merits (FOMs) like transconductance (gm), output conductance (gds), intrinsic gain (gm/gds), parasitic capacitances and cutoff frequency (fT) were explored for σ variation from 0 to 5 nm. Circuit-level performance was also studied using an n-type ETL-DGTFET based resistive load inverter. Though the device performance is effected by the strain due to lattice mismatch between Si/Ge, it does not influence the effect of lateral straggle.

中文翻译：

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就横向散乱而言，源极掺杂梯度对锗外延层双栅极TFET性能的影响

通过模拟研究证明了源极掺杂梯度 (SDG) 在横向散乱 (σ) 方面对锗外延层双栅极隧道场效应晶体管 (ETL-DGTFET) 性能的影响。在器件制造过程中用于离子注入的非零倾斜角将注入的掺杂剂原子从源极和漏极延伸到沟道区，这会影响器件在导通和截止状态期间的性能。为了更深入地了解 σ 对器件性能的影响，各种 DC 性能参数，如 Ion/Ioff 比、平均亚阈值斜率 (SSavg) 和模拟/RF 品质因数 (FOM)，如跨导 (gm)、输出电导(gds)、固有增益 (gm/gds)、寄生电容和截止频率 (fT) 被探索了从 0 到 5 nm 的 σ 变化。还使用基于 n 型 ETL-DGTFET 的电阻负载逆变器研究了电路级性能。尽管器件性能受 Si/Ge 晶格失配引起的应变的影响，但不影响横向散乱的影响。