Clean transfer of transition metal dichalcogenides (TMDs) film is highly desirable, as intrinsic properties of TMDs may be degraded in a conventional wet transfer process using a polymer-based resist and toxic chemical solvent. Residues from the resists often remain on the transferred TMDs, thereby causing a significant variation in their electrical and optical characteristics. Therefore, an alternative to the conventional wet transfer method is needed-one in which no residue is left behind. Herein, we report that our molybdenum disulfide (MoS2) films synthesized by plasma-enhanced chemical vapor deposition (PECVD) can be easily transferred onto arbitrary substrates (such as SiO2/Si, polyimide, fluorine-doped tin oxide, and polyethersulfone) by using water alone, i.e., without residues or chemical solvents. The transferred MoS2 film retains its original morphology and physical properties, which are investigated by optical microscopy, atomic force microscopy, Raman, X-ray photoelectron spectroscopy, and surface tension analysis. Furthermore, we demonstrate multiple recycling of the resist-free transfer for the nano-grain MoS2 film. Using the proposed water-assisted and recyclable transfer, MoS2/p-doped Si wafer photodiode was fabricated, and the opto-electric properties of the photodiode were characterized to demonstrate the feasibility of the proposed method.

中文翻译：

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将纳米颗粒 MoS2 薄膜可回收的自由聚合物转移到任意基材上

过渡金属二硫属化物 (TMD) 薄膜的清洁转移是非常理想的，因为在使用基于聚合物的抗蚀剂和有毒化学溶剂的传统湿转移工艺中，TMD 的固有特性可能会降低。来自抗蚀剂的残留物经常留在转移的 TMD 上，从而导致它们的电学和光学特性发生显着变化。因此，需要一种替代传统湿转移方法的方法——一种不留下任何残留物的方法。在此，我们报告了我们通过等离子体增强化学气相沉积 (PECVD) 合成的二硫化钼 (MoS2) 薄膜可以很容易地转移到任意衬底（如 SiO2/Si、聚酰亚胺、氟掺杂氧化锡和聚醚砜）上。单独使用水，即没有残留物或化学溶剂。转移后的 MoS2 薄膜保留了其原始形态和物理性质，通过光学显微镜、原子力显微镜、拉曼、X 射线光电子能谱和表面张力分析对其进行了研究。此外，我们展示了纳米晶粒 MoS2 薄膜的无抗蚀剂转移的多次循环利用。使用所提出的水辅助和可回收转移，制备了 MoS2/p 掺杂的硅晶片光电二极管，并对光电二极管的光电特性进行了表征，以证明所提方法的可行性。