Electrical properties of the wafer bonding p-GaAs/n-GaN, p-GaAs/n-Si and p-GaAs/ITO//ITO/n-Si are investigated systematically by scanning Kelvin probe force microscopy (KPFM), capacitance–voltage (C–V) and current–voltage (I–V) measurements. By using KPFM, the contact potential distributions and contact barrier differences of these bonding heterojunctions with Schottky-like characteristics or ohmic feature have been obtained. The contact barrier differences measured by KPFM match well with those measured by C–V. These barriers indicate the thicker interface layer has a larger barrier height, which could contain more interface states. The I–V curve of the heterostructure with the smaller contact barrier difference is shown as an Ohmic contact feature. In contrast, the I–V curve of the junction with the larger contact barrier difference shows a Schottky contact behavior with a larger turn-on voltage. These behaviors indicate that the electrical conductivity of the bonding sample depends on the bonding interface layer significantly.

通过扫描开尔文探针力显微镜 (KPFM)、电容-电压系统研究了晶圆键合 p-GaAs/n-GaN、p-GaAs/n-Si 和 p-GaAs/ITO//ITO/n-Si 的电性能( C – V ) 和电流-电压 ( I – V ) 测量。通过使用KPFM，获得了这些具有类肖特基特性或欧姆特性的键合异质结的接触电位分布和接触势垒差异。KPFM 测量的接触势垒差异与C – V测量的接触势垒差异非常匹配。这些势垒表明较厚的界面层具有较大的势垒高度，可以包含更多的界面态。在我- V具有较小接触势垒差异的异质结构曲线显示为欧姆接触特征。相比之下，具有较大接触势垒差异的结的I - V曲线显示了具有较大导通电压的肖特基接触行为。这些行为表明键合样品的电导率显着取决于键合界面层。