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Room temperature terahertz detector based on single silicon nanowire junctionless transistor with high detectivity
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-10-23 , DOI: 10.1088/1361-6641/abb8b0
Alka Jakhar , Veerendra Dhyani , Samaresh Das

In this work, the n-type single silicon nanowire (NW) based junctionless field-effect transistor (FET) is demonstrated as an efficient terahertz (THz) detector. For the effective coupling of the THz radiations with NW junctionless FET, the lobes of the rounded bow-tie antenna are connected to the gate and source terminals of the device. The antenna design is optimized with proper impedance matching conditions to achieve maximum power transfer between antenna and detector. The simulated antenna resonates at 0.43 THz frequency with 19 GHz bandwidth. Further simulations have been done on Lumerical finite difference time domain software to analyze the electric field distribution profile. To investigate the optical response of this optimized antenna design, an array of the simulated antenna has been fabricated and its transmission spectra are measured. Finally, the simulated antenna has been integrated with the n-type NW junctionless transistor. A maximum responsivity of 468 V W ...

中文翻译:

基于单硅纳米线无结晶体管的高室温室温太赫兹探测器

在这项工作中,基于n型单硅纳米线(NW)的无结场效应晶体管(FET)被证明是一种有效的太赫兹(THz)检测器。为了将THz辐射与NW无结FET有效耦合,圆形蝴蝶结天线的波瓣连接到设备的栅极和源极端子。天线设计在适当的阻抗匹配条件下进行了优化,以实现天线与检测器之间的最大功率传输。模拟天线以0.43 THz的频率谐振,带宽为19 GHz。在Lumerical有限差分时域软件上进行了进一步的仿真,以分析电场分布曲线。为了研究这种优化天线设计的光学响应,已制造了一系列模拟天线,并测量了其传输频谱。最后,模拟天线已与n型NW无结晶体管集成在一起。最大响应度为468 VW ...
更新日期:2020-10-30
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