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29-/35 GHz Dual-band high-gain phase shifter with hybrid π-networks
Electronics Letters ( IF 1.1 ) Pub Date : 2020-09-25 , DOI: 10.1049/el.2020.1894
Dong Wei, Xuan Ding, Hai Yu, Yen‐Cheng Kuan, Qun Jane Gu, Zhiwei Xu, Shunli Ma, Junyan Ren

This Letter presents a 29-/35 GHz dual-band high-gain hybrid π-network-based phase shifter. The hybrid π-network realised by combining electrical tuning through capacitors and magnetic tuning through transformers extends the phase shift range. Furthermore, the phase shift modules are inserted between the vertically stacking transistors to realise the embedded phase shifting with the minimum loss. The Gm-stages offer the additional signal gain to offset attenuation from the passive phase shifter. This prototype, fabricated in a 28 nm CMOS process, demonstrates a 360° continuous phase shift range with a maximum gain of 22 dB at 35 GHz, and 240° continuous phase shift range with a maximum gain of 20 dB at 29 GHz. It consumes 26 mW power and 1.25 mm × 0.75 mm chip area.

中文翻译:

具有混合 π 网络的 29-/35 GHz 双频高增益移相器

本文介绍了一种基于 29-/35 GHz 双频高增益混合 π 网络的移相器。通过电容器的电调谐和变压器的磁调谐相结合实现的混合 π 网络扩展了相移范围。此外,在垂直堆叠的晶体管之间插入移相模块,以实现最小损耗的嵌入式移相。Gm 级提供额外的信号增益以抵消无源移相器的衰减。该原型采用 28 nm CMOS 工艺制造,展示了 360° 连续相移范围,35 GHz 下的最大增益为 22 dB,以及 240° 连续相移范围,29 GHz 下的最大增益为 20 dB。它的功耗为 26 mW,芯片面积为 1.25 mm × 0.75 mm。
更新日期:2020-09-25
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