A GaN-based gate driver circuits have been successfully designed and fabricated using a commercially available 6-inch GaN-on-Si platform. The driver circuits consist of three-stage direct-coupled FET logic (DCFL) inverters featuring monolithically integrated depletion-mode (D-mode) and enhancement-mode (E-mode) high electron mobility transistors (HEMTs). At room temperature (RT), at a supply voltage of 4 V the single-stage DCFL fabricated on the same die exhibits a large gate swing (3.84 V) and large noise margins (logic-low noise margin (NML) of 1.55 V and logic-high noise margin (NMH) of 2.18 V), both of which are desirable for all-GaN IC applications. Meanwhile, the gate driver circuits were characterised up to 200°C on a PCB with a capacitance load of 1 nF in series with 4.7 Ω resistance to resemble the load condition. At 200°C, the gate driver circuits function well even at 5 MHz operation frequency. The turn on/off propagation delay and rise/fall time of the gate driver circuits are 5/40 and 22/18 ns, respectively. As far as the authors’ knowledge, this is the highest reported operation frequency for GaN-based gate driver circuits under such high temperature, making it very promising for high-temperature high-frequency all-GaN integrated circuit (IC) applications.

中文翻译：

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具有 1 nF/4.7 Ω RC 负载的 200°C/5 MHz GaN 基栅极驱动器电路，适用于高温高频全 GaN IC 应用

使用商用 6 英寸 GaN-on-Si 平台成功设计和制造了基于 GaN 的栅极驱动器电路。驱动器电路由三级直接耦合 FET 逻辑 (DCFL) 反相器组成，具有单片集成耗尽模式（D 模式）和增强模式（E 模式）高电子迁移率晶体管 (HEMT)。在室温 (RT) 和 4 V 电源电压下，在同一芯片上制造的单级 DCFL 表现出较大的栅极摆幅 (3.84 V) 和较大的噪声容限（1.55 V 的逻辑低噪声容限 (NML) 和2.18 V 的逻辑高噪声容限 (NMH)），这两者都是全 GaN IC 应用的理想选择。同时，栅极驱动器电路在 PCB 上具有高达 200°C 的特性，具有 1 nF 的电容负载与 4.7 Ω 电阻串联以类似于负载条件。在 200°C 时，即使在 5 MHz 工作频率下，栅极驱动器电路也能正常工作。栅极驱动器电路的开启/关闭传播延迟和上升/下降时间分别为 5/40 和 22/18 ns。据作者所知，这是 GaN 基栅极驱动器电路在如此高温下的最高工作频率，使其在高温高频全 GaN 集成电路 (IC) 应用中非常有前景。