GaN power ICs on engineered substrates of Qromis substrate technology (QST) are promising for future power applications, thanks to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, and high mechanical yield in combination with thick GaN buffer layers. In this article, we will elaborate in detail on epitaxy, integration, and trench isolation. Electrical characterizations show that the GaN buffer bears a breakdown voltage of > 650 V under the leakage criterion of $10~{\mu }\text{A}$ /mm² at 150 °C. The fabricated 36 mm power HEMTs with ${L} _{\mathrm{ GD}}$ of $16~\mu \text{m}$ show a high threshold voltage of 3.1 V and a low OFF-state drain leakage of $ < 1~\mu \text{A}$ /mm until 650 V. The horizontal trench isolation breakdown voltage exceeds 850 V. The device dispersion is well controlled within 20% over full temperature and bias range. Finally, GaN power ICs on this platform are demonstrated.

中文翻译：

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在 200 mm 工程基板上集成 650 V GaN 功率 IC

Qromis 衬底技术 (QST) 工程衬底上的 GaN 功率 IC 有望用于未来的电源应用，这要归功于减少的寄生效应、多晶 AlN 热匹配衬底、高热导率和高机械产量以及厚 GaN 缓冲层。在本文中，我们将详细阐述外延、集成和沟槽隔离。电气特性表明 GaN 缓冲器在漏电准则下承受 > 650 V 的击穿电压 $10~{\mu}\text{A}$ /mm ²在150°C。制造的 36 mm 功率 HEMT，具有 ${L} _{\mathrm{ GD}}$ 的 $16~\mu \text{m}$ 显示 3.1 V 的高阈值电压和低断态漏电流 $ < 1~\mu \text{A}$ /mm 直到 650 V。水平沟槽隔离击穿电压超过 850 V。在整个温度和偏置范围内，器件分散度被很好地控制在 20% 以内。最后，展示了该平台上的 GaN 功率 IC。