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Impact of Water Content in NMP on Ohmic Contacts in GaN HEMT Technologies
IEEE Transactions on Semiconductor Manufacturing ( IF 2.7 ) Pub Date : 2020-11-01 , DOI: 10.1109/tsm.2020.3028446
Alexander Hugger , Aleksandra Dlugolecka , Hermann Stieglauer , Raphael Ehrbrecht , Michael Hosch

Wet chemical lift off in N-Methyl-2-pyrrolidone (NMP) is widely used in GaN HEMT Front End manufacturing. In case of a Ti-Al-Ni-Au based metal stack for ohmic contacts, the quality of the lift-off process is a strong function of the water content in the solvent NMP. In this article, it will be shown that the metal stack can be attacked during lift off in NMP when its water content is exceeding 5%. Additionally, environmental impacts on the hygroscopy of NMP are investigated. Both temperature of NMP and its contact area to air impact the evolution of its water content. Based on these investigations, the lift off sequence was slightly adapted in order to keep moisture below a certain level and avoid optical defects on ohmic contacts.

中文翻译:

NMP 中的水含量对 GaN HEMT 技术中欧姆接触的影响

N-甲基-2-吡咯烷酮 (NMP) 中的湿化学剥离广泛用于 GaN HEMT 前端制造。在用于欧姆接触的基于 Ti-Al-Ni-Au 的金属叠层的情况下,剥离过程的质量与溶剂 NMP 中的水含量密切相关。在本文中,将证明当 NMP 的含水量超过 5% 时,金属叠层在升空过程中会受到攻击。此外,还研究了环境对 NMP 吸湿性的影响。NMP 的温度及其与空气的接触面积都会影响其含水量的演变。基于这些研究,对剥离顺序进行了轻微调整,以将水分保持在一定水平以下并避免欧姆接触上的光学缺陷。
更新日期:2020-11-01
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