In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thicknesses and areas. It was revealed that the memory window of the FeFET has a significant correlation with the ferroelectric capacitor from the transfer curves of the transistor after the series connection. By decreasing the thickness and area of the ferroelectric capacitor, the memory window of the FeFET was improved, which could be verified through the TCAD simulation tool and capacitance matching model. With the series-connected ferroelectric capacitor, in addition to optimizing the characteristics of ferroelectric memory, we can effectively avoid the interface-caused undesirable effects in conventional ferroelectric memory during film stacking. These results provide a solution for future low-power embedded memory application.

中文翻译：

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串联铁电电容器在用于存储器应用的 HfO2 基铁电场效应晶体管中的影响

在这项工作中，我们展示了基于 HfO2 的铁电场效应晶体管 (FeFET) 与 HfAlO 铁电电容器串联用于存储器应用，并进一步研究了不同厚度和面积的铁电电容器的影响。从串联连接后的晶体管的转移曲线显示，FeFET的存储器窗口与铁电电容器具有显着相关性。通过减小铁电电容器的厚度和面积，改善了 FeFET 的存储窗口，这可以通过 TCAD 仿真工具和电容匹配模型进行验证。用串联的铁电电容器，除了优化铁电存储器的特性外，我们可以有效地避免传统铁电存储器在薄膜堆叠过程中界面引起的不良影响。这些结果为未来的低功耗嵌入式存储器应用提供了解决方案。