Motivated by the exciting properties of metal halide perovskites in photovoltaic applications, there is an evolving need to further explore the limitations of this class of materials in broader fields and high end optoelectronics, which requires better control over the film structure, defect levels, and quality. Epitaxial growth has been ubiquitously deployed in the semiconducting industry. This affords routes to precisely align the atomic arrangement to control the structure and strain and achieve the highest levels of optoelectronic performance. In this review, the recent emergence and progress in the epitaxial growth of metal halide perovskites are introduced within the context of epitaxial and quasiepitaxial approaches, and recent advances are surveyed from growth methods to application integration. The main criteria distinguishing epitaxy and quasiepitaxy, i.e., lattice matching and ordering, can be deployed to direct the selection of proper substrates, growth methods, and precursors for various applications.

中文翻译：

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卤化物钙钛矿的外延和准外延生长：通往高端光电的新途径

受金属卤化物钙钛矿在光伏应用中令人兴奋的特性的推动，不断发展的需要进一步探索这类材料在更广泛的领域和高端光电领域的局限性，这需要更好地控制薄膜结构、缺陷水平和质量. 外延生长已经在半导体行业中无处不在。这提供了精确对齐原子排列以控制结构和应变并实现最高水平的光电性能的途径。在这篇综述中，在外延和准外延方法的背景下介绍了金属卤化物钙钛矿外延生长的最新出现和进展，并对从生长方法到应用集成的最新进展进行了调查。