The temperature behavior of Tl4HgI6 photoluminescence spectra is presented. The emission spectra are studied in the temperature range between 4.5 and 300 K and in the spectral range 350–650 nm. Two main emission bands at ∼551 nm and ∼448 nm are observed corresponding to the emissions of HgI2 and Tll impurity centers. It is assumed that the low-temperature emission band at ∼520 nm corresponds to the recombination of the exciton. The luminescence peaks observed in emission spectra in the range between 350 and 410 nm correspond to the phonon repetitions. The excitation spectra of emission bands are measured at 4.5 K and compared with the electron density of states.

中文翻译：

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Tl4HgI6 单晶的光致发光

介绍了 Tl4HgI6 光致发光光谱的温度行为。在 4.5 和 300 K 之间的温度范围和 350-650 nm 的光谱范围内研究发射光谱。在~551 nm 和~448 nm 处观察到两个主要发射带，对应于 HgI2 和 Tll 杂质中心的发射。假设~520 nm 的低温发射带对应于激子的复合。在 350 到 410 nm 范围内的发射光谱中观察到的发光峰对应于声子重复。发射带的激发光谱在 4.5 K 下测量并与电子态密度进行比较。